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Titolo:
UNIFORMITY IMPROVEMENT OF OPTICAL AND ELECTRICAL CHARACTERISTICS IN INTEGRATED VERTICAL-TO-SURFACE TRANSMISSION ELECTROPHOTONIC DEVICE WITHA VERTICAL-CAVITY
Autore:
KURIHARA K; NUMAI T; YOSHIKAWA T; KOSAKA H; SUGIMOTO M; SUGIMOTO Y; KASAHARA K;
Indirizzi:
NEC CORP LTD,OPTOELECTR RES LABS,34 MIYUKIGAOKA TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 3A, volume: 33, anno: 1994,
pagine: 1352 - 1356
SICI:
0021-4922(1994)33:3A<1352:UIOOAE>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
EMITTING SEMICONDUCTOR-LASERS; ELECTROPHOTONIC DEVICES; POLARIZATION; DESIGN;
Keywords:
OPTICAL INTERCONNECTION; OPTICAL FUNCTIONAL DEVICE; SURFACE-EMITTING LASER; 2-D INTEGRATION; UNIFORMITY; REACTIVE ION-BEAM ETCHING; SELF-ALIGNMENT PROCESS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
K. Kurihara et al., "UNIFORMITY IMPROVEMENT OF OPTICAL AND ELECTRICAL CHARACTERISTICS IN INTEGRATED VERTICAL-TO-SURFACE TRANSMISSION ELECTROPHOTONIC DEVICE WITHA VERTICAL-CAVITY", JPN J A P 1, 33(3A), 1994, pp. 1352-1356

Abstract

We report an improvement in uniformity of both electrical and opticalcharacteristics in an integrated vertical-to-surface transmission electro-photonic device with a vertical cavity. This improvement is due to both highly controlled reactive ion-beam etching and a self-alignment process. Reactive ion-beam etching highly controls etching depth, and leads to uniform electrical and optical characteristics. Self-alignment process makes it possible to fabricate a fine pattern with high accuracy. By using these fabrication processes, the deviations of both the electrical resistance and the. optical light-output characteristicsare reduced to less than half of those for the wet-etched devices. Furthermore, the remaining deviation in the light-output characteristicsis reduced by suppressing light reflection on the surface. As a result, the standard deviation of the threshold current under the CW condition is 0.39 mA. This value is about half of that for the wet-etched devices.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 18:41:40