Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
A SI1-XGEX SI SINGLE-QUANTUM-WELL P-I-N STRUCTURE GROWN BY SOLID-SOURCE AND GAS-SOURCE HYBRID SI MOLECULAR-BEAM EPITAXY/
Autore:
KATO Y; FUKATSU S; USAMI N; SHIRAKI Y;
Indirizzi:
IBM RES,TOKYO RES LAB,1623-14 SHIMO TSURUMA YAMATO KANAGAWA 242 JAPAN UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU TOKYO 153 JAPAN
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 136, anno: 1994,
pagine: 355 - 360
SICI:
0022-0248(1994)136:1-4<355:ASSSPS>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
ENERGY-ELECTRON-DIFFRACTION; CHEMICAL VAPOR-DEPOSITION; SURFACE RECONSTRUCTIONS; HYDROGEN COVERAGE; PHOTOLUMINESCENCE; SILICON; SI(001); SI2H6;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
Y. Kato et al., "A SI1-XGEX SI SINGLE-QUANTUM-WELL P-I-N STRUCTURE GROWN BY SOLID-SOURCE AND GAS-SOURCE HYBRID SI MOLECULAR-BEAM EPITAXY/", Journal of crystal growth, 136(1-4), 1994, pp. 355-360

Abstract

By means of ''hybrid'' Si molecular beam epitaxy (MBE), an n-type Si contact layer for an electroluminescent (EL) p-i-n diode was successfully regrown on a Si1-xGex/Si single quantum well (SQW) layer. The starting undoped SQW layer was grown by gas-source MBE (GSMBE) using disilane (Si2H6) and germane (GeH4), and the n-Si contact layer was regrownby using solid-source MBE after transferring the sample through the air. A (2 X 1) reconstruction was observed on a GSMBE-prepared Si surface even after the sample was exposed to air for 15 h. Evidence of the excellent quality of the EL p-i-n device was provided by the sharpest emission lines, almost-equal-to 5.5 meV, ever reported in the EL spectra of an SiGe system.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 12:16:10