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Titolo:
COMPENSATION IN GAAS - SI IN CORRELATION TO AS PRESSURE DURING THE CRYSTAL-GROWTH
Autore:
BOUDRIOT H; SIEGEL W; DEUS K; BUHRIG W;
Indirizzi:
FREIBERG UNIV MIN & TECHNOL,INST EXPTL PHYS,SILBERMANNSTR 1 D-09596 FREIBERG GERMANY FREIBERG UNIV MIN & TECHNOL,INST NE MET & REINSTSTOFFE D-09596 FREIBERG GERMANY
Titolo Testata:
Solid state communications
fascicolo: 10, volume: 89, anno: 1994,
pagine: 889 - 891
SICI:
0038-1098(1994)89:10<889:CIG-SI>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRON-MOBILITY; GALLIUM-ARSENIDE; SILICON; ABSORPTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
H. Boudriot et al., "COMPENSATION IN GAAS - SI IN CORRELATION TO AS PRESSURE DURING THE CRYSTAL-GROWTH", Solid state communications, 89(10), 1994, pp. 889-891

Abstract

The compensation degree of GaAs : Si crystals grown by horizontal Bridgman method was investigated as a function of As pressure during the growth. Three different methods (local vibrational mode (LVM) absorption, infrared absorption, Hall-effect and conductivity) were used for the determination of the compensation degree, K. These methods yield the same result of a minimum of K at a small excess of the Ga mole fraction in the melt. Possible compensation mechanisms are discussed to explain this minimum.

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Documento generato il 15/07/20 alle ore 08:31:12