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Titolo:
PIXELS CONSISTING OF A SINGLE VERTICAL-CAVITY LASER THYRISTOR AND A DOUBLE VERTICAL-CAVITY PHOTOTRANSISTOR
Autore:
KOSAKA H; OGURA I; SAITO H; SUGIMOTO M; KURIHARA K; NUMAI T; KASAHARA K;
Indirizzi:
NEC CORP LTD,OPTOELECTR RES LABS,34 MIYUKIGAOKA TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
IEEE photonics technology letters
fascicolo: 12, volume: 5, anno: 1993,
pagine: 1409 - 1411
SICI:
1041-1135(1993)5:12<1409:PCOASV>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
SURFACE-EMITTING LASER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
7
Recensione:
Indirizzi per estratti:
Citazione:
H. Kosaka et al., "PIXELS CONSISTING OF A SINGLE VERTICAL-CAVITY LASER THYRISTOR AND A DOUBLE VERTICAL-CAVITY PHOTOTRANSISTOR", IEEE photonics technology letters, 5(12), 1993, pp. 1409-1411

Abstract

Bidirectionally cascadable optical pixels are proposed that consist of a single vertical cavity surface emitting laser thyristor and a double vertical cavity phototransistor. Despite almost identical layer structures, each device characteristic can be independently optimized by introducing a lambda/2-spacer layer into the phototransistor section. A lasing threshold of 0.8 mA and a slope efficiency of 0.25 W/A are obtained for the laser-thyristor, and a flat-topped photocurrent spectrum over 30 Angstrom and a photocurrent gain of 70 A/W are obtained for the phototransistor at the resonant wavelength. This paper demonstrates the possibility of monolithic integration using thermal desorption and a regrowth technique and the suitability of these devices for massively parallel optical interconnections.

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Documento generato il 23/09/20 alle ore 12:38:12