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Titolo:
RADIATION TOLERANCE OF SINGLE-SIDED SILICON MICROSTRIPS
Autore:
HOLMESSIEDLE A; ROBBINS M; WATTS S; ALLPORT P; BRENNER R; MOSER HG; ROE S; STRAVER J; WEILHAMMER P; CHOCHULA P; MIKULEC I; MOSZCZYNSKI S; TURALA M; DABROWSKI W; GRYBOS P; IDZIK M; LOUKAS D; MISIAKOS K; SIOTIS I; ZACHARIADOU K; DULINSKI W; MICHELE J; SCHAEFFER M; TURCHETTA R; BOOTH P; RICHARDSON J; SMITH N; GILL K; HALL G; SACHDEVA R; SOTTHIBANDHU S; VITE D; WHEADON R; ARRIGHI C; DELPIERRE P; HABRARD MC; CLEMENS JC; MOUTHUY T; AVSET BS; EVENSEN L; HANNEBORG A; HANSEN TA; BISELLO D; GIRALDO A; PACCAGNELLA A; KURCHANINOV L; SPIRITI E; APSIMON R; GIUBELLINO P; RAMELLO L; DASILVA WLP; KRAMMER M; SCHUSTER M;
Indirizzi:
BRUNEL UNIV UXBRIDGE UB8 3PH MIDDX ENGLAND UNIV CAMBRIDGE CAMBRIDGE CAMBS ENGLAND CERN GENEVA SWITZERLAND COMENIUS UNIV BRATISLAVA BRATISLAVA SLOVAKIA INST NUCL PHYS KRAKOW POLAND FAC PHYS & NUCL TECHNIQUES CRACOW KRAKOW POLAND DEMOKRITOS NATL CTR SCI RES GR-15310 ATHENS GREECE LEPSI STRASBOURG FRANCE UNIV LIVERPOOL LIVERPOOL ENGLAND IMPERIAL COLL SCI TECHNOL & MED LONDON ENGLAND CPPM MARSEILLE FRANCE UNIV OSLO OSLO NORWAY SENTER IND FORSKNING OSLO NORWAY INFN PADUA ITALY INFN ROME ITALY RUTHERFORD APPLETON LAB CHILTON OXON ENGLAND INFN TURIN ITALY IHEP VIENNA AUSTRIA
Titolo Testata:
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
fascicolo: 3, volume: 339, anno: 1994,
pagine: 511 - 523
SICI:
0168-9002(1994)339:3<511:RTOSSM>2.0.ZU;2-3
Fonte:
ISI
Lingua:
ENG
Soggetto:
DETECTORS; DAMAGE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
23
Recensione:
Indirizzi per estratti:
Citazione:
A. Holmessiedle et al., "RADIATION TOLERANCE OF SINGLE-SIDED SILICON MICROSTRIPS", Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 339(3), 1994, pp. 511-523

Abstract

The RD20 collaboration is investigating the design and operation of an LHC inner tracking detector based on silicon microstrips. Measurements have been made on prototype detectors after irradiation with electrons, neutrons, photons, and protons for doses up to 5 Mrad and fluences up to 10(15) particles/cm(2). The annealing of effective doping changes caused by high neutron fluences, one of the major limits to detector lifetime at the LHC, is shown to be strongly inhibited by cooling below room temperature. Detailed results are presented on the critical issue of microstrip capacitance. We have also investigated bulk damagecaused by high-energy protons, interstrip isolation after neutron irradiation, and MOS capacitors irradiated with electrons and photons.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/11/20 alle ore 16:20:29