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Titolo:
CHARACTERIZATION OF EPITAXIALLY GROWN CVD-PB(ZR, TI)O3 FILMS WITH HIGH DEPOSITION RATE
Autore:
FUNAKUBO H; IMASHITA K; SHINOZAKI K; MIZUTANI N;
Indirizzi:
TOKYO INST TECHNOL,FAC ENGN,DEPT INORGAN MAT,2-12-1 OOKAYAMA,MEGURO KU TOKYO 152 JAPAN
Titolo Testata:
Nippon Seramikkusu Kyokai gakujutsu ronbunshi
fascicolo: 2, volume: 102, anno: 1994,
pagine: 114 - 118
SICI:
0914-5400(1994)102:2<114:COEGCT>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
PZT THIN-FILMS; CHEMICAL VAPOR-DEPOSITION; OPTICAL-PROPERTIES; CVD;
Keywords:
EPITAXIAL FILM; PB(ZRXTI1-X)O3; CVD; HIGH DEPOSITION RATE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
22
Recensione:
Indirizzi per estratti:
Citazione:
H. Funakubo et al., "CHARACTERIZATION OF EPITAXIALLY GROWN CVD-PB(ZR, TI)O3 FILMS WITH HIGH DEPOSITION RATE", Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 102(2), 1994, pp. 114-118

Abstract

Pb(Zr(x)Ti1-x)O3 films with good surface flatness were deposited by CVD using the gas mixture of Pb(DPM)2-Zr(O.t-Bu)4-Ti(O.i-Pr)4-O2. The epitaxially grown Pb(Zr(x)Ti1-x)O3 films were deposited on (100) MgO substrates with 300 nm/min of the deposition rate. This deposition rate is the highest among the reported value. The existence of the grains with slight different angle along the film thickness was ascertained byTEM observation. It was attributed to the volume change at the Curie temperature and to the large temperature dependence of a- and c-axes lattice parameters of Pb(Zr(x)Ti1-x)O3 film compared with that of MgO substrate below the Curie temperature. The refractive index of this film was in good agreement with that reported for Pb (Zr(x)Ti1-x) O3 Crystal without post heat-treatment and its dispersion can be fitted the Sellmeier dispersion formula.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 05:37:59