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Titolo:
OPTIMIZATION OF DEEP UV POSITIVE TONE TOP SURFACE IMAGING PROCESS
Autore:
HAN WS; LEE JH; KANG HY; PARK CG; KOH YB; LEE MY;
Indirizzi:
SAMSUNG ELECTR CO,CTR ADV TECHNOL,SAN 24 KYONGGI DO SOUTH KOREA
Titolo Testata:
Microelectronic engineering
fascicolo: 1-4, volume: 23, anno: 1994,
pagine: 255 - 258
SICI:
0167-9317(1994)23:1-4<255:OODUPT>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
NO
Recensione:
Indirizzi per estratti:
Citazione:
W.S. Han et al., "OPTIMIZATION OF DEEP UV POSITIVE TONE TOP SURFACE IMAGING PROCESS", Microelectronic engineering, 23(1-4), 1994, pp. 255-258

Abstract

Top surface imaging (TSI) process as a dry development process has been developed for many years to be contributed to device application, But, because conventional wet development process has already been developed so well, there was no room for TSI process to be utilized in devices. TSI process, even though having swelling problem, still has strong potential to be utilized in such layers which have severe topography and which contain small features exceeding the resolution limit of astepper used. In this paper, swelling effect and its control by meansof WEBS (WEt development Before Silylation) treatment for SS-201 resist is discussed. Also soft bake temperature is discussed in view of process optimization. How to form small contact holes beyond resolution limit is another topic for discussion. Finally, application result with TSI process will be shown.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/11/20 alle ore 08:32:30