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Titolo:
AN A-SI-H GAS MICROSTRIP DETECTOR
Autore:
SAVARD P; HAMEL LA; MARTIN JP; TARAS P;
Indirizzi:
UNIV MONTREAL,PHYS NUCL LAB MONTREAL H3C 3J7 PQ CANADA UNIV MONTREAL,PHYS NUCL LAB MONTREAL H3C 3J7 PQ CANADA
Titolo Testata:
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
fascicolo: 2-3, volume: 337, anno: 1994,
pagine: 387 - 393
SICI:
0168-9002(1994)337:2-3<387:AAGMD>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON; TRANSISTORS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
P. Savard et al., "AN A-SI-H GAS MICROSTRIP DETECTOR", Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 337(2-3), 1994, pp. 387-393

Abstract

Novel gas microstrip detectors based on a layer of hydrogenated amorphous silicon (a-Si:H) have been built. Energy resolutions of 18% FWHM and gains of 1500 were measured with 5.9 keV X-rays from an Fe-55 source. An attempt is made to understand the variations in gain and energyresolution observed as a function of various applied voltages and time. The effect of the backplane voltage on the electric field in the anode region is discussed by analogy with MOSFETs having a geometry similar to that of our detectors.

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Documento generato il 28/11/20 alle ore 17:38:43