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Titolo:
INFLUENCE OF THE FIRST THERMAL CYCLES OF AN IC PROCESS ON OXYGEN PRECIPITATION IN CZ SILICON-WAFERS - A DETAILED ANALYSIS
Autore:
JOLY JP; ROBERT V;
Indirizzi:
CEA TECHNOL AVANCEES,LETI,AVE MARTYRS 85X F-38041 GRENOBLE FRANCE
Titolo Testata:
Semiconductor science and technology
fascicolo: 1, volume: 9, anno: 1994,
pagine: 105 - 111
SICI:
0268-1242(1994)9:1<105:IOTFTC>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
11
Recensione:
Indirizzi per estratti:
Citazione:
J.P. Joly e V. Robert, "INFLUENCE OF THE FIRST THERMAL CYCLES OF AN IC PROCESS ON OXYGEN PRECIPITATION IN CZ SILICON-WAFERS - A DETAILED ANALYSIS", Semiconductor science and technology, 9(1), 1994, pp. 105-111

Abstract

The oxygen precipitation kinetics, the oxide precipitate density (N-p) and the denuded zone width (DZ) in standard CZ silicon wafers comingfrom the supplier and randomly sampled were determined after annealing at temperatures from 950 to 1100 degrees C. Correlations between theprecipitation kinetics factors and the precipitate densities were clearly established and interpreted using the usual precipitation models. A clear relationship between the oz values and the precipitate densities was obtained. How a further high-temperature anneal such as a CMOSwell drive-in at 1160 degrees C affects these parameters was experimentally determined. All these results can be well interpreted in terms of selective precipitate growth from a population of microprecipitates. Practical recommendations for improved internal gettering are deduced from this work.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 15/07/20 alle ore 08:04:04