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Titolo:
DETAILED ANALYSIS OF COHERENCE COLLAPSE IN SEMICONDUCTOR-LASERS
Autore:
LI H; YE J; MCINERNEY JG;
Indirizzi:
UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,OPTOELECTR DEVICE PHYS GRP ALBUQUERQUE NM 87131 NATL UNIV IRELAND UNIV COLL CORK,DEPT PHYS CORK CORK IRELAND
Titolo Testata:
IEEE journal of quantum electronics
fascicolo: 9, volume: 29, anno: 1993,
pagine: 2421 - 2432
SICI:
0018-9197(1993)29:9<2421:DAOCCI>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Soggetto:
SINGULAR-VALUE DECOMPOSITION; EXTERNAL CAVITY LASER; OPTICAL FEEDBACK; SINGLE-MODE; SPECTRAL CHARACTERISTICS; STRANGE ATTRACTORS; INJECTION-LASER; RING LASER; CHAOS; LINEWIDTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
48
Recensione:
Indirizzi per estratti:
Citazione:
H. Li et al., "DETAILED ANALYSIS OF COHERENCE COLLAPSE IN SEMICONDUCTOR-LASERS", IEEE journal of quantum electronics, 29(9), 1993, pp. 2421-2432

Abstract

Experimental and theoretical studies of coherence collapse in GaAs/AlGaAs laser diodes with weak optical feedback show two distinct routes to chaos. In each case we observe undamped relaxation oscillations, then external cavity mode beating, and finally coherence collapse. When there is frequency locking between the relaxation oscillations and external cavity modes, a period doubling sequence is followed, otherwise the route to chaos is via quasiperiodicity.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/09/20 alle ore 16:01:10