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Titolo:
ENHANCEMENT OF HYDROGEN DIFFUSION IN A-SI-H THROUGH INTENSE ILLUMINATION
Autore:
GREIM O; WEBER J; TANG XM; BAER Y; KROLL U;
Indirizzi:
UNIV NEUCHATEL,INST PHYS CH-2000 NEUCHATEL SWITZERLAND UNIV NEUCHATEL,INST MICROTECH CH-2000 NEUCHATEL SWITZERLAND
Titolo Testata:
Solid state communications
fascicolo: 8, volume: 88, anno: 1993,
pagine: 583 - 585
SICI:
0038-1098(1993)88:8<583:EOHDIA>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMORPHOUS-SILICON; EXCITATION-FREQUENCY; GLOW-DISCHARGE; METASTABILITY; PLASMA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
O. Greim et al., "ENHANCEMENT OF HYDROGEN DIFFUSION IN A-SI-H THROUGH INTENSE ILLUMINATION", Solid state communications, 88(8), 1993, pp. 583-585

Abstract

Hydrogenated amorphous Silicon (a-Si:H) films have been thermally annealed at temperatures in the range 220 degrees C to 270 degrees C for 48 hours, either under intense visible light illumination (15 watts/cm(2)) or in the dark. After each annealing, the hydrogen concentration profile was measured with RBS-ERDA ion beam analysis methods. Substantial enhancement of the hydrogen diffusion constant D was observed in the illuminated samples. To our knowledge, this is the first observation of this effect directly in a-Si:H films. Our results are in agreement with others obtained with a-Si:H/a-Si:D/a-Si:H sandwiches by SIMS (Secondary Ion Mass Spectroscopy).

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Documento generato il 02/07/20 alle ore 19:18:50