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Titolo:
LOW-TEMPERATURE INALAS BUFFER LAYERS USING TRIMETHYLARSENIC AND ARSINE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Autore:
PAN N; CARTER J; ELLIOTT J; HENDRIKS H; BRIERLEY S; HSIEH KC;
Indirizzi:
RAYTHEON RES LEXINGTON MA 02173 UNIV ILLINOIS,DEPT ELECT & COMP ENGN URBANA IL 61801
Titolo Testata:
Applied physics letters
fascicolo: 22, volume: 63, anno: 1993,
pagine: 3029 - 3031
SICI:
0003-6951(1993)63:22<3029:LIBLUT>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
INDIUM-PHOSPHIDE; PHASE EPITAXY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
N. Pan et al., "LOW-TEMPERATURE INALAS BUFFER LAYERS USING TRIMETHYLARSENIC AND ARSINE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION", Applied physics letters, 63(22), 1993, pp. 3029-3031

Abstract

Low temperature (LT) InAlAs buffer layers grown lattice matched to InP substrates using a combination of trimethylarsenic and arsine were demonstrated. The LT InAlAs buffer layer showed excellent surface morphology with a maximum resistivity of 2 X 10(5) OMEGA cm at a growth temperature of 475-degrees-C. Low temperature photoluminescence and Hall-effect measurements confirming the high quality of epitaxial layers grown on top of the LT InAlAs buffer layer. Electrochemical capacitance voltage measurements consistently confirmed the absence of conductive impurity spikes at the epitaxial/substrate interface.

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Documento generato il 14/07/20 alle ore 03:14:56