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Titolo:
SILICIDES FOR INTEGRATED-CIRCUITS - TISI2 AND COSI2
Autore:
MAEX K;
Indirizzi:
IMEC,KAPELDREEF 75 B-3001 LOUVAIN BELGIUM
Titolo Testata:
Materials science & engineering. R, Reports
fascicolo: 2-3, volume: 11, anno: 1993,
pagine: 53 - 153
SICI:
0927-796X(1993)11:2-3<53:SFI-TA>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
SHALLOW-JUNCTION FORMATION; LOW-TEMPERATURE REDISTRIBUTION; INDUCED DISLOCATION GENERATION; RAPID THERMAL NITRIDATION; 0.25-MU-M CMOS TECHNOLOGY; DOPANT-COMPOUND FORMATION; ELASTIC RECOIL DETECTION; SCHOTTKY-BARRIER HEIGHT; MULTILAYER THIN-FILMS; SOLID-STATE REACTION;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
287
Recensione:
Indirizzi per estratti:
Citazione:
K. Maex, "SILICIDES FOR INTEGRATED-CIRCUITS - TISI2 AND COSI2", Materials science & engineering. R, Reports, 11(2-3), 1993, pp. 53-153

Abstract

Silicides have been a topic of intensive research for more than a decade.The driving force for these investigations has certainly been the interesting materials aspects of the silicides and their applications in integrated circuits. The advantages of easy formability and low resistivity for both CoSi2 and TiSi2 have led to an intensive use of these silicides in self-aligned processes for simultaneous silicidation ofsource, drain and gate. The fundamental investigations of these silicides include thermodynamic and kinetic aspects of phase formation, interactions with doped Si and related defect generation, and the interaction with oxide and metals. Specific issues related to the technological implementation of silicides in a full process will be discussed in view of the trend to scale the silicided area both in the vertical andin the lateral dimensions.

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Documento generato il 29/03/20 alle ore 15:24:17