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Titolo:
RECORD LOW-THRESHOLD CURRENT IN MICROCAVITY SURFACE-EMITTING LASER
Autore:
NUMAI T; KAWAKAMI T; YOSHIKAWA T; SUGIMOTO M; SUGIMOTO Y; YOKOYAMA H; KASAHARA K; ASAKAWA K;
Indirizzi:
NEC CORP LTD,OPTOELECTR RES LABS,34 MIYUKIGAOKA TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 10B, volume: 32, anno: 1993,
pagine: 120001533 - 120001534
SICI:
0021-4922(1993)32:10B<120001533:RLCIMS>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
VERTICAL-CAVITY; GAAS;
Keywords:
SURFACE-EMITTING LASER; MICROCAVITY; THRESHOLD CURRENT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
T. Numai et al., "RECORD LOW-THRESHOLD CURRENT IN MICROCAVITY SURFACE-EMITTING LASER", JPN J A P 2, 32(10B), 1993, pp. 120001533-120001534

Abstract

We demonstrate a record low threshold current of 190 muA in a microcavity surface-emitting laser with a 5-mum-diameter airpost, in pulsed operation at room temperature with no heat sink. This low threshold current is attributed to high-quality epitaxial layers and a dry-etched smooth sidewall.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 18:39:13