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Titolo:
SELF-ORGANIZED GRAIN-GROWTH LARGER THAN 1 MU-M THROUGH PULSED-LASER-INDUCED MELTING OF SILICON FILMS
Autore:
SAMESHIMA T;
Indirizzi:
SONY CORP,RES CTR,174 FUJITSUKA CHO,HODOGAYA KU YOKOHAMA KANAGAWA 240JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 10B, volume: 32, anno: 1993,
pagine: 120001485 - 120001488
SICI:
0021-4922(1993)32:10B<120001485:SGLT1M>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
INDUCED AMORPHIZATION;
Keywords:
THIN FILM TRANSISTOR; LATERAL GRAIN GROWTH; INTERFACE-CONTROLLED GROWTH; HOMOGENEOUS SOLIDIFICATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
T. Sameshima, "SELF-ORGANIZED GRAIN-GROWTH LARGER THAN 1 MU-M THROUGH PULSED-LASER-INDUCED MELTING OF SILICON FILMS", JPN J A P 2, 32(10B), 1993, pp. 120001485-120001488

Abstract

Large-grain growth (> 1 mum) was observed through pulsed-laser-induced melting of silicon films. When silicon islands with a width of 10 mum and a thickness of 70 nm formed on a quartz substrate were melted completely by irradiation of a XeCl excimer laser with an energy of 360 mJ/cm2, the shape of the film was changed into a globular shape. The width shrank to 2.4 mum and the film thickness increased to 270 nm nearthe edge. Large grains with a size of 1.2 mum were grown and grains were lined two deep in the globular islands. The large-grain growth occurs along a temperature gradient in the lateral direction, which is caused during the change of the film shape.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/11/20 alle ore 06:42:04