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Titolo:
HIGH-PERFORMANCE LARGE-AREA INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
Autore:
HIERONYMI F; BOTTCHER EH; DROGE E; KUHL D; BIMBERG D;
Indirizzi:
TECH UNIV BERLIN,INST FESTKORPERPHYS 1 W-1000 BERLIN 12 GERMANY
Titolo Testata:
IEEE photonics technology letters
fascicolo: 8, volume: 5, anno: 1993,
pagine: 910 - 913
SICI:
1041-1135(1993)5:8<910:HLIMP>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
INP;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
F. Hieronymi et al., "HIGH-PERFORMANCE LARGE-AREA INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS", IEEE photonics technology letters, 5(8), 1993, pp. 910-913

Abstract

We report the fabrication and characteristics of high-performance large-area InP:Fe/InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photodetectors. With a 350-mum X 350-mum large active area, the detectors offer the excellent feature of 900-MHz electrical bandwidth and 1.7-pF capacitance at 10-V bias. The respective dark current density is 20 pA/mum2, and the CW responsivity is 0.4 A/W at 1.3-mum wavelength. The detectors are therefore ideally suited for applications in the long-wavelength range that require a large detection area and, at the same time, a high bandwidth and a low capacitance.

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Documento generato il 07/08/20 alle ore 21:12:17