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Titolo:
BURIED HETEROSTRUCTURE 0.98 MU-M INGAAS INGAASP/INGAP LASERS/
Autore:
VAIL EC; LIM SF; WU YA; FRANCIS DA; CHANGHASNAIN CJ; BHAT R; CANEAU C;
Indirizzi:
STANFORD UNIV,GINZTON LAB STANFORD CA 94305 BELLCORE RED BANK NJ 07701
Titolo Testata:
Applied physics letters
fascicolo: 16, volume: 63, anno: 1993,
pagine: 2183 - 2185
SICI:
0003-6951(1993)63:16<2183:BH0MII>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
QUANTUM-WELL LASERS; MOLECULAR-BEAM EPITAXY; HIGH-TEMPERATURE; CLADDING LAYERS; SQW LASERS; 0.98-MU-M;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
E.C. Vail et al., "BURIED HETEROSTRUCTURE 0.98 MU-M INGAAS INGAASP/INGAP LASERS/", Applied physics letters, 63(16), 1993, pp. 2183-2185

Abstract

We report the fabrication and comparison of buried heterostructure and ridge waveguide 0.98 mum lasers with strained InGaAs quantum wells, stepped InGaAsP confinement layers, and InGaP claddings. The buried heterostructure (BH) lasers exhibit superior performance with lower threshold and higher power. We demonstrate a BH laser with 4.4 mA threshold current, 77% differential quantum efficiency, 196 mW of output power, and 150 K characteristic temperature. No catastrophic optical damageis observed on the laser facets, although the facets were not coated or treated.

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Documento generato il 03/12/20 alle ore 23:49:19