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Titolo:
SILICON PRECIPITATION INDUCED BY ARGON EXCIMER-LASER IN SURFACE-LAYERS OF SI3N4
Autore:
OHMUKAI M; NAITO H; OKUDA M; KUROSAWA K; SASAKI W; MATSUSHITA T; TSUNAWAKI Y; NOZAWA S; IGARASHI T;
Indirizzi:
AKASHI COLL TECHNOL,DEPT ELECT ENGN AKASHI HYOGO 674 JAPAN UNIV OSAKA PREFECTURE,DEPT ELECTR SAKAI OSAKA 593 JAPAN UNIV MIYAZAKI,DEPT ELECT ENGN MIYAZAKI 88921 JAPAN OSAKA SANGYO UNIV,DEPT ELECT & ELECTR ENGN OSAKA 574 JAPAN USHIO INC HIMEJI HYOGO 67102 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 8A, volume: 32, anno: 1993,
pagine: 120001062 - 120001065
SICI:
0021-4922(1993)32:8A<120001062:SPIBAE>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
SIO2;
Keywords:
SILICON NITRIDE; RADIATION EFFECT; EXCIMER LASER; SILICON PRECIPITATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
M. Ohmukai et al., "SILICON PRECIPITATION INDUCED BY ARGON EXCIMER-LASER IN SURFACE-LAYERS OF SI3N4", JPN J A P 2, 32(8A), 1993, pp. 120001062-120001065

Abstract

The effects of argon excimer laser irradiation on silicon nitride films deposited on GaAs substrates have been investigated. The precipitation of crystalline silicon induced by the irradiation is detected in the surface layer of silicon nitride with X-ray photoelectron and Ramanspectroscopy. The silicon precipitation mechanism is basically a photochemical breaking of Si-N bonds. From the dependence of the silicon precipitation on the film thickness, it is shown that temperature above1300-degrees-C is an additional factor necessary for precipitation.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/03/20 alle ore 17:38:02