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Titolo:
AL-BASED PRECIPITATE EVOLUTION DURING HIGH-TEMPERATURE ANNEALING OF AL IMPLANTED IN SI
Autore:
GALVAGNO G; SCANDURRA A; RAINERI V; SPINELLA C; TORRISI A; LAFERLA A; SCIASCIA V; RIMINI E;
Indirizzi:
IST METODOL & TECNOL MICROELETTRO,CNR,DIPARTIMENTO FIS,CORSO ITALIA 57 I-95129 CATANIA ITALY CONSORZIO CATANIA RIC I-95125 CATANIA ITALY UNIV CATANIA,DIPARTIMENTO SCI CHIM I-95125 CATANIA ITALY CORIMME I-95100 CATANIA ITALY
Titolo Testata:
Journal of the Electrochemical Society
fascicolo: 8, volume: 140, anno: 1993,
pagine: 2313 - 2318
SICI:
0013-4651(1993)140:8<2313:APEDHA>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
ALUMINUM; SILICON; PROFILES; DEVICES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
G. Galvagno et al., "AL-BASED PRECIPITATE EVOLUTION DURING HIGH-TEMPERATURE ANNEALING OF AL IMPLANTED IN SI", Journal of the Electrochemical Society, 140(8), 1993, pp. 2313-2318

Abstract

Al-based precipitate evolution for 80 keV Al ions implanted in Si hasbeen investigated. Precipitates are formed during high temperature annealings of 1 X 10(15)/cm2 implanted samples. They are located at two depths where Al concentration peaks are detected. Al atoms are gettered into the extended defects present in the crystal and/or precipitate when their concentration is higher than the solid solubility value at the annealing temperature. Increasing annealing time, precipitates dissolve out and only a small fraction of atoms diffuses into the sample,meanwhile the greater part evaporates from the sample. At 1 X 10(13)/cm2 dose the Al concentration is below the solid solubility limit. Thesecondary defects are not detected and the dopant profile does not display anomalous peaks. Moreover, all the implanted Al is electrically active and remains in the sample during the first instant of annealing. At higher annealing times it diffuses out of the sample reducing theresidual dose.

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Documento generato il 21/09/20 alle ore 15:57:05