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Titolo:
TEMPERATURE-INSENSITIVE VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY WITH A BROAD GAIN BANDWIDTH
Autore:
KAJITA M; KURIHARA K; SAITO H; YOSHIKAWA T; SUGIMOTO Y; KASAHARA K;
Indirizzi:
NEC CORP LTD,OPTOELECTR RES LABS,34 MIYUKIGAOKA TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
Electronics Letters
fascicolo: 22, volume: 31, anno: 1995,
pagine: 1925 - 1927
SICI:
0013-5194(1995)31:22<1925:TVSLAW>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Keywords:
VERTICAL CAVITY SURFACE EMITTING LASERS; SEMICONDUCTOR LASER ARRAYS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
M. Kajita et al., "TEMPERATURE-INSENSITIVE VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY WITH A BROAD GAIN BANDWIDTH", Electronics Letters, 31(22), 1995, pp. 1925-1927

Abstract

Temperature-insensivive vertical-cavity surface-emitting lasers (VCSELs) are promising devices for low-cost optical interconnection. The authors measured the injection current at a threshold and light output power of 1 mW at temperatures of 20, 50 and 80 degrees C. At 80 degreesC and 1 mW, the driving current for VCSELs with a broad gain bandwidth was reduced by similar to 20%, compared with that for conventional VCSELs. The deviation in driving current for VCSELs with a broad gain bandwidth was similar to 10%, which demonstrates that these VCSELs haveuniform temperature characteristics in an 8x8 array.

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Documento generato il 10/07/20 alle ore 19:00:15