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Titolo:
COMPUTER MODELING OF POROUS SILICON FORMATION
Autore:
VADJIKAR RM; NATH AK;
Indirizzi:
CTR ADV TECHNOL INDORE 452013 INDIA
Titolo Testata:
Journal of Materials Science
fascicolo: 21, volume: 30, anno: 1995,
pagine: 5466 - 5472
SICI:
0022-2461(1995)30:21<5466:CMOPSF>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
DIFFUSION-LIMITED AGGREGATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
R.M. Vadjikar e A.K. Nath, "COMPUTER MODELING OF POROUS SILICON FORMATION", Journal of Materials Science, 30(21), 1995, pp. 5466-5472

Abstract

Porous silicon formation has been simulated by the finite diffusion length (FDL) model. This considers a dynamic isoconcentration profile from which the aggregating particles begin their random walks. In this paper we report on the isoconcentration profile non-uniformities whichincrease as the finite diffusion length is increased. The implementation of the FDL model with zero diffusion length generates non-fractal structures with a fractal dimension close to 1. It is found that Eden clusters cannot be generated at zero diffusion length, due to the problem of ''sinking isoconcentration profile''. We conclude that these are limitations that should be considered in the FDL model for improvingthe understanding of physical phenomena such as formation and morphology of porous silicon.

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Documento generato il 01/12/20 alle ore 13:26:56