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Titolo:
ELECTRICAL CHARACTERIZATION OF REACTIVELY SPUTTERED TIN DIFFUSION BARRIER LAYERS FOR COPPER METALLIZATION
Autore:
KAUFMANN C; BAUMANN J; GESSNER T; RASCHKE T; RENNAU M; ZICHNER N;
Indirizzi:
TECH UNIV CHEM ZWICKAU,FAK ELEKTROTECH & INFORMAT TECH,ZENTRUM MIKROTECHNOL D-09107 CHEMNITZ GERMANY
Titolo Testata:
Applied surface science
fascicolo: 1-4, volume: 91, anno: 1995,
pagine: 291 - 294
SICI:
0169-4332(1995)91:1-4<291:ECORST>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
TITANIUM NITRIDE; THIN-FILMS; SILICON TECHNOLOGY; INTERDIFFUSIONS; SILICIDES; OXYGEN; SI; CU;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
23
Recensione:
Indirizzi per estratti:
Citazione:
C. Kaufmann et al., "ELECTRICAL CHARACTERIZATION OF REACTIVELY SPUTTERED TIN DIFFUSION BARRIER LAYERS FOR COPPER METALLIZATION", Applied surface science, 91(1-4), 1995, pp. 291-294

Abstract

TiN films were characterized by sheet resistance measurements, Auger electron spectroscopy and cross-sectional transmission electron microscopy. The properties as diffusion barrier between copper and silicon were investigated by diode leakage current measurements on n(+)p diodesafter annealing at 350 degrees C for 30 min and at 450, 500 and 550 degrees C for 60 min. Both Ti-rich and N-rich TiN films were deposited at a DC magnetron power of 8 kW. Furthermore, additional N-rich films were deposited at a DC magnetron power of 2 kW. The copper was then deposited by metalorganic low pressure chemical vapour deposition and bysputtering. Samples with and without a diffusion barrier were prepared. N-rich films deposited at DC magnetron powers of 2 and 8 kW are found to be an effective barrier up to an annealing at 500 degrees C for 60 min in case of metallization with sputtered copper. On the other hand the Ti-rich barriers still fail after annealing at 450 degrees C for 60 min. The barrier structures metallized with copper deposited by metalorganic low pressure chemical vapour deposition are almost broken even at lower temperatures.

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Documento generato il 13/07/20 alle ore 05:13:23