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Titolo:
STRUCTURE AND ELECTRICAL-PROPERTIES OF THIN COPPER-FILMS DEPOSITED BYMOCVD
Autore:
ROBER J; KAUFMANN C; GESSNER T;
Indirizzi:
TECH UNIV CHEMNITZ ZWICKAU,ZENTRUM MIKROTECHNOL,FAK ELEKTROTECH & INFORMAT TECH D-09107 CHEMNITZ GERMANY
Titolo Testata:
Applied surface science
fascicolo: 1-4, volume: 91, anno: 1995,
pagine: 134 - 138
SICI:
0169-4332(1995)91:1-4<134:SAEOTC>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
7
Recensione:
Indirizzi per estratti:
Citazione:
J. Rober et al., "STRUCTURE AND ELECTRICAL-PROPERTIES OF THIN COPPER-FILMS DEPOSITED BYMOCVD", Applied surface science, 91(1-4), 1995, pp. 134-138

Abstract

A low temperature CVD process for the blanket deposition of copper films using the metalorganic precursor Hexafluoroacetylacetonato Copper(I) Vinyltrimethylsilane (Cu(hfac)TMVS, CupraSelect(TM)) was developed and tested on different substrate materials. A liquid delivery system was applied for the dosage of the precursor. Film properties were determined by four-point probe, surface profilometer and scanning electronmicroscope (SEM). Deposition rates on the scale of 50 nm/min and filmresistivities down to 2 mu Omega . cm were obtained depending on the process conditions and the substrate.

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Documento generato il 11/07/20 alle ore 14:20:28