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Titolo:
ANALYTICAL CALCULATION OF CHARGE-TRANSPOR T IN A-SI-H
Autore:
CHEN WC; HAMEL LA;
Indirizzi:
UNIV MONTREAL,RECH PHYS & TECHNOL COUCHES MINCES GRP,CP 6128,SUCCURSALE CTR VILLE MONTREAL PQ H3C 3J7 CANADA UNIV MONTREAL,RECH PHYS & TECHNOL COUCHES MINCES GRP MONTREAL PQ H3C 3J7 CANADA
Titolo Testata:
Canadian journal of physics
fascicolo: 9-10, volume: 73, anno: 1995,
pagine: 585 - 594
SICI:
0008-4204(1995)73:9-10<585:ACOCTI>2.0.ZU;2-J
Fonte:
ISI
Lingua:
FRE
Soggetto:
PARTICLE DETECTORS; SIGNAL;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
W.C. Chen e L.A. Hamel, "ANALYTICAL CALCULATION OF CHARGE-TRANSPOR T IN A-SI-H", Canadian journal of physics, 73(9-10), 1995, pp. 585-594

Abstract

Multitrapping transport of carriers through exponential band tails isstudied for carriers generated at an arbitrary position in the devicein presence of a linearly varying electric field, thus generalizing the usual treatment of time of flight experiments. An analytical expression is found for the free carrier density distribution n(x, t) for values of the dispersion parameter 0 < alpha < 1. In the case alpha = 1/2, analytical solutions are given for the transient current I(t) and the induced charge Q(t). Comparison with previous calculations is made for the special case of uniform electric field and carriers initially generated at one interface.

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Documento generato il 28/11/20 alle ore 18:24:51