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Titolo:
DIRECT OBSERVATION OF TRANSFERRED-ELECTRON EFFECT IN GAN
Autore:
HUANG ZC; GOLDBERG R; CHEN JC; ZHENG YD; MOTT DB; SHU P;
Indirizzi:
UNIV MARYLAND,DEPT ELECT ENGN CATONSVILLE MD 21228 UNIV MARYLAND,DEPT ELECT ENGN CATONSVILLE MD 21228 HUGHES STX CORP GREENBELT MD 20770 NANJING UNIV,DEPT PHYS NANJING 210008 PEOPLES R CHINA NASA,GODDARD SPACE FLIGHT CTR GREENBELT MD 20771
Titolo Testata:
Applied physics letters
fascicolo: 19, volume: 67, anno: 1995,
pagine: 2825 - 2826
SICI:
0003-6951(1995)67:19<2825:DOOTEI>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
GALLIUM NITRIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
Z.C. Huang et al., "DIRECT OBSERVATION OF TRANSFERRED-ELECTRON EFFECT IN GAN", Applied physics letters, 67(19), 1995, pp. 2825-2826

Abstract

We report the direct observation of transferred-electron effect in unintentionally doped GaN epilayers grown by metalorganic chemical vapordeposition. The negative differential resistivity (NDR) was observed from the current-electric field characteristics in GaN using a metal-semiconductor-metal (M-S-M) system. The threshold field for the onset of NDR was independent of the spacing of M-S-M fingers, and was measured to be 1.91 x 10(5) V/cm for GaN with an n-type carrier concentrationof 10(14) cm(-3). This value is very close to the value obtained withan n-type carrier concentration of 10(14) cm from theoretical simulation. This observation is an experimental evidence of transferred-electron effects in GaN, which is important in understanding GaN energy band structure and in the application of Gunn-effect devices using GaN materials. (C) 1995 American Institute of Physics.

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Documento generato il 04/12/20 alle ore 03:40:47