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Titolo:
REACTION-MECHANISM BETWEEN SIC CERAMIC AN D TI FOIL IN SOLID-STATE BONDING
Autore:
FENG JC; NAKA N; SCHUSTER JC;
Indirizzi:
OSAKA UNIV,WELDING RES INST,11-1 MIHOGAOKA IBARAKI OSAKA 567 JAPAN UNIV VIENNA,INST PHYS CHEM VIENNA AUSTRIA
Titolo Testata:
Nippon Kinzoku Gakkaishi
fascicolo: 9, volume: 59, anno: 1995,
pagine: 978 - 983
SICI:
0021-4876(1995)59:9<978:RBSCAD>2.0.ZU;2-D
Fonte:
ISI
Lingua:
JPN
Keywords:
CERAMICS METAL JOINING; SOLID BONDING; DIFFUSION PATH; REACTION MECHANISM; INTERFACE STRUCTURE; SILICON CARBIDE; TITANIUM CARBIDE; TITANIUM SILICIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
J.C. Feng et al., "REACTION-MECHANISM BETWEEN SIC CERAMIC AN D TI FOIL IN SOLID-STATE BONDING", Nippon Kinzoku Gakkaishi, 59(9), 1995, pp. 978-983

Abstract

The solid state bonding of pressureless-sintered (PLS) SiC to SiC using Ti-foils (50 mu m, 20 mu m and 8 mu m) were conducted at the bonding temperatures ranging from 1373 to 1673 K for 0.3 to 144 ks in vacuum. The total diffusion path, formation process of reaction phases and the reaction mechanism were examined. At a bonding temperature of 1673 K for 0.3 ks, granular TiC next to Ti and a mixture of Ti5Si3Cx + TiC phases next to SiC were formed. Further, the Ti5Si3Cx Single phase appeared between SiC and the mixture of Ti5Si3Cx + TiC at the bonding time of 0.9 ks. Upon the formation of Ti3SiC2 (T phase) after the bondingtime of 3.6 ks, the complete diffusion path was observed as follows: SiC/Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiC/TiC/Ti. At a longer bonding time, TiC and Ti5Si3Cx were consumed and only the Ti3SiC2 and TiSi2 phases were detected in the reaction zone.

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Documento generato il 03/12/20 alle ore 12:53:34