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Titolo:
IN-SITU OBSERVATION OF SILICON HYDRIDES AN SI(100) SURFACES DURING SYNCHROTRON-RADIATION-STIMULATED SI2H6 GAS-SOURCE MOLECULAR-BEAM EPITAXY
Autore:
YOSHIGOE A; MASE K; TSUSAKA Y; URISU T; KOBAYASHI Y; OGINO T;
Indirizzi:
INST MOLEC SCI,DEPT VACUUM UV PHOTOSCI,38 MYODAIJI OKAZAKI AICHI 444 JAPAN INST MOLEC SCI,DEPT VACUUM UV PHOTOSCI OKAZAKI AICHI 444 JAPAN GRAD UNIV ADV STUDIES,INST MOLEC SCI OKAZAKI AICHI 444 JAPAN NIPPON TELEGRAPH & TEL PUBL CORP,BASIC RES LABS ATSUGI KANAGAWA 24301JAPAN
Titolo Testata:
Applied physics letters
fascicolo: 16, volume: 67, anno: 1995,
pagine: 2364 - 2366
SICI:
0003-6951(1995)67:16<2364:IOOSHA>2.0.ZU;2-9
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTION ABSORPTION-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; TEMPERATURE; ADSORBATES; DISILANE; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
A. Yoshigoe et al., "IN-SITU OBSERVATION OF SILICON HYDRIDES AN SI(100) SURFACES DURING SYNCHROTRON-RADIATION-STIMULATED SI2H6 GAS-SOURCE MOLECULAR-BEAM EPITAXY", Applied physics letters, 67(16), 1995, pp. 2364-2366

Abstract

Silicon hydrides (SiHn) on the Si(100) surface during synchrotron-radiation (SR) stimulated Si2H6 gas source molecular beam epitaxy has been observed in situ at low temperatures (less than or equal to 400 degrees C), by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates. At high temperatures (400 degreesC, 370 degrees C), SiH is a dominant surface species, while with temperature decrease from 275 to 50 degrees C, the number of SiH decreases, and, on the other hand, SiH2 and SiH3 appear and increase. This result explains the change of reflection high-energy diffraction pattern from 2X1 to 1X1. The SiH in the bulk network has not been observed. SR irradiation on the film at 140 degrees C after deposition shows that SiH2 and SiH3 are easily decomposed to SiH and that SiH decomposes muchmore slowly than SiH2 and SiH3. (C) 1995 American Institute of Physics.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/09/20 alle ore 10:55:18