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Titolo:
CHARACTERIZATION OF NICKEL CONTAMINATION IN FLOAT-ZONE AND CZOCHRALSKY SILICON-WAFERS BY USING ELECTROLYTIC METAL TRACER OR MICROWAVE PHOTOCONDUCTIVITY DECAY MEASUREMENT
Autore:
WALZ D; JOLY JP; FALSTER R; KAMARINOS G;
Indirizzi:
CENG,CEA,LETI,17 RUE MARTYRS F-38054 GRENOBLE 09 FRANCE MEMC SPA I-28100 NOVARA ITALY ENSERG,LPCS F-38016 GRENOBLE 01 FRANCE
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 8A, volume: 34, anno: 1995,
pagine: 4091 - 4095
SICI:
0021-4922(1995)34:8A<4091:CONCIF>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Keywords:
SILICON WAFER; CARRIER RECOMBINATION LIFETIME; NICKEL CONTAMINATION; INTERNAL GETTERING; ELYMAT; MICROWAVE PHOTOCONDUCTIVE DECAY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
D. Walz et al., "CHARACTERIZATION OF NICKEL CONTAMINATION IN FLOAT-ZONE AND CZOCHRALSKY SILICON-WAFERS BY USING ELECTROLYTIC METAL TRACER OR MICROWAVE PHOTOCONDUCTIVITY DECAY MEASUREMENT", JPN J A P 1, 34(8A), 1995, pp. 4091-4095

Abstract

The influence of nickel contamination on the free carrier recombination lifetime and on the electrolytic diodes reverse dark current of electrolytic metal tracer (ELYMAT) have been studied on both float zone (FZ) and Czochralsky Conductivity Decay (CZ) wafers. The reverse currents of the ELYMAT electrolytic cell's measured on moderately doped FZ wafers are clearly increasing with nickel concentration. The recombination lifetime in both FZ wafers, and CZ wafers after oxygen precipitation (Internal gettering) treatments is influenced by nickel contamination, In CZ wafers with oxygen precipitation nickel contamination causesa drop of the lifetime which is directly related to the oxygen precipitate density. The characteristic variation of recombination lifetime dominated by oxygen precipitates as a function of injection level changes significantly after intentional nickel contamination. All these results bring new insights for the fast identification of Ni contamination in device fabrication lines.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/07/20 alle ore 22:16:52