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Titolo:
TEMPERATURE CHARACTERISTICS OF A VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A BROAD-GAIN BANDWIDTH
Autore:
KAJITA M; KAWAKAMI T; NIDO M; KIMURA A; YOSHIKAWA T; KURIHARA K; SUGIMOTO Y; KASAHARA K;
Indirizzi:
NEC CORP LTD,OPTOELECTR RES LABS,34 MIYUKIGAOKA TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
IEEE journal of selected topics in quantum electronics
fascicolo: 2, volume: 1, anno: 1995,
pagine: 654 - 660
SICI:
1077-260X(1995)1:2<654:TCOAVS>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
QUANTUM-WELL LASERS; PERFORMANCE; RESISTANCE; REDUCTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
M. Kajita et al., "TEMPERATURE CHARACTERISTICS OF A VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A BROAD-GAIN BANDWIDTH", IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 654-660

Abstract

Temperature-insensitive characteristics are of great importance in implementing the actual applications of vertical-cavity surface-emittinglasers (VCSEL's) because of the temperature change in the surroundings. To extend the operational temperature range of such lasers, we fabricated a VCSEL with a broad gain bandwidth. The active layers in VCSEL's consist of multiple quantum wells (MQW's) with different bandgap energies. From the change in the threshold current, with temperature as a parameter, we found that the operational temperature range of a VCSEL with a broad gain bandwidth is more than 20 degrees C wider than that of conventional VCSEL's, whose active layers consist of a single type of MQW. We demonstrate that the extended-gain bandwidth gives bettertemperature characteristics, In addition, we simulated the structure of the active layers, and the optimized structure resulted in a 1-mW light output power at less than 5 mA in a single transverse mode oscillation from 20-70 degrees C.

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Documento generato il 15/07/20 alle ore 07:28:10