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Titolo:
DYNAMICS OF MOLECULAR-HYDROGEN INTERACTIONS WITH SILICON SURFACES
Autore:
HASSELBRINK E;
Indirizzi:
MAX PLANCK GESELL,FRITZ HABER INST,FARADAYWEG 4-6 D-14195 BERLIN GERMANY
Titolo Testata:
Berichte der Bunsengesellschaft fur Physikalische Chemie
fascicolo: 9, volume: 99, anno: 1995,
pagine: 1077 - 1081
SICI:
0005-9021(1995)99:9<1077:DOMIWS>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
INTERNAL-STATE DISTRIBUTIONS; PI-BONDED DIMERS; DESORPTION-KINETICS; RECOMBINATIVE DESORPTION; MONOHYDRIDE PHASE; H-2 DESORPTION; SI(100); SI(111)7X7; DIHYDRIDE; MECHANISM;
Keywords:
ADSORPTION; DESORPTION; MOLECULAR BEAMS; SEMICONDUCTORS; SURFACES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
34
Recensione:
Indirizzi per estratti:
Citazione:
E. Hasselbrink, "DYNAMICS OF MOLECULAR-HYDROGEN INTERACTIONS WITH SILICON SURFACES", Berichte der Bunsengesellschaft fur Physikalische Chemie, 99(9), 1995, pp. 1077-1081

Abstract

Molecular hydrogen exhibits an exceedingly low dissociative sticking coefficient on the (100) and (111) faces of silicon. This finding would suggest that the molecule experiences a large barrier (>100 kJ/mol) when it attempts to adsorb. However the assumption of such a large barrier is in conflict with the known desorption activation energy and the estimated bond strength of hydrogen atoms to silicon surface atoms. In recent experiments it has been observed that the desorbing molecules do not carry away a large extend of excess energy as translational energy nor in their internal degrees of freedrom. This apparent contradiction can be resolved if one considers that the dangling bonds on thesilicon surface are localized and that hydrogen adsorption induces significant alterations of the surface structure. Hence, hydrogen adsorption is expected to be activated in degrees of freedrom localized in the surface. This proposition has been substantiated by the observationof an increasing adsorption probability with increasing sample temperature. Recent total energy calculations lend theoretical confirmation to this model.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/12/20 alle ore 17:59:29