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Titolo:
REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION
Autore:
SIIMON H; AARIK J;
Indirizzi:
TARTU STATE UNIV,INST EXPTL PHYS & TECHNOL,ULIKOOLI 18 2400 TARTU ESTONIA
Titolo Testata:
Journal de physique. IV
fascicolo: C5, volume: 5, anno: 1995,
pagine: 277 - 282
SICI:
1155-4339(1995)5:C5<277:ROTAHA>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
H. Siimon e J. Aarik, "REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION", Journal de physique. IV, 5(C5), 1995, pp. 277-282

Abstract

Model calculations and time dependence of the deposit mass recorded by quartz crystal microbalance during atomic layer growth of tantalum oxide are used to determine sticking coefficients of TaCl5 and H2O, anddiffusion coefficient of TaCl5 in N-2. It is shown that the reactivity of TaCl5 towards H2O-treated tantalum oxide surface is remarkably higher than the reactivity of H2O towards TaCl5-treated tantalum oxide.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 19:20:43