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Titolo:
MODELING OF PRECURSOR FLOW AND DEPOSITION IN ATOMIC LAYER DEPOSITION REACTOR
Autore:
SIIMON H; AARIK J;
Indirizzi:
TARTU STATE UNIV,INST EXPTL PHYS & TECHNOL,ULIKOOLI 18 2400 TARTU ESTONIA
Titolo Testata:
Journal de physique. IV
fascicolo: C5, volume: 5, anno: 1995,
pagine: 245 - 252
SICI:
1155-4339(1995)5:C5<245:MOPFAD>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTANCE-DIFFERENCE SPECTROSCOPY; CHEMICAL VAPOR-DEPOSITION; SURFACE KINETICS; EPITAXY; GAAS; CVD; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
H. Siimon e J. Aarik, "MODELING OF PRECURSOR FLOW AND DEPOSITION IN ATOMIC LAYER DEPOSITION REACTOR", Journal de physique. IV, 5(C5), 1995, pp. 245-252

Abstract

A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulse is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analyzed.

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Documento generato il 28/11/20 alle ore 12:58:09