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Titolo:
AN IMPROVED ETCHING PROCESS USED FOR THE FABRICATION OF SUBMICRON NB ALOX/NB JOSEPHSON-JUNCTIONS/
Autore:
AOYAGI M; MAEZAWA M; NAKAGAWA H; KUROSAWA I; TAKADA S;
Indirizzi:
ELECTROTECH LAB,1-1-4 UMEZONO TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
IEEE transactions on applied superconductivity
fascicolo: 2, volume: 5, anno: 1995,
parte:, 3
pagine: 2334 - 2337
SICI:
1051-8223(1995)5:2<2334:AIEPUF>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
TUNNEL-JUNCTIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
M. Aoyagi et al., "AN IMPROVED ETCHING PROCESS USED FOR THE FABRICATION OF SUBMICRON NB ALOX/NB JOSEPHSON-JUNCTIONS/", IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2334-2337

Abstract

It is important to develop a reliable and reproducible fabrication process of submicron Nb/AlOx/Nb Josephson junctions to improve the integration level and the operating speed of the Josephson LSI circuit. Forthis purpose, we have developed an improved etching process by introducing a dummy etching process and using a scanning electron microscope(SEM) as an etching end-point detector. The dummy etching process improves the anisotropy of a reactive ion etching (RIE) process using CF4. The etching residue around a junction is detected easily and correctly by the SEM observation. We have successfully fabricated Nb/AlOx/Nb Josephson junctions with critical current density of 10(4) A/cm(2) using the cross-line patterning (CLIP) method and the electron beam lithography, where the junction size was varied from 2 mu m to 0.5 mu m at 0.1 mu m intervals. High-quality submicron junctions for integrated circuits with suitable critical current variations were obtained.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/10/20 alle ore 01:30:20