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Titolo:
DISLOCATION NUCLEATION AND PROPAGATION IN SEMICONDUCTOR HETEROSTRUCTURES
Autore:
CHERNS D; MYLONAS S; CHOU CT; WU J; ASHENFORD DE; LUNN B;
Indirizzi:
UNIV BRISTOL,HH WILLS PHYS LAB,TYNDALL AVE BRISTOL BS8 1TL AVON ENGLAND UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE KINGSTON HULL HU6 7RX N HUMBERSIDE ENGLAND
Titolo Testata:
Scanning microscopy
fascicolo: 4, volume: 8, anno: 1994,
pagine: 841 - 848
SICI:
0891-7035(1994)8:4<841:DNAPIS>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
MISFIT DISLOCATIONS; GENERATION;
Keywords:
MISFIT DISLOCATIONS; STACKING FAULT PYRAMIDS; NUCLEATION OF DISLOCATIONS; CDTE/CDMNTE; ZNTE/GASB; DIAMOND DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
D. Cherns et al., "DISLOCATION NUCLEATION AND PROPAGATION IN SEMICONDUCTOR HETEROSTRUCTURES", Scanning microscopy, 8(4), 1994, pp. 841-848

Abstract

This paper considers misfit dislocation nucleation and propagation indilute magnetic semiconductor heterostructures in the CdTe-ZnTe-MnTe system. It is shown that, where the deposit is in tension, 1/2 <110> dislocations with inclined Burgers vectors propagate by glide along interfacial <110> directions and may dissociate giving intrinsic stackingfaults. In cases where the deposit is in compression, 1/2 <110> dislocations show no evidence of dissociation and propagate by extensive cross-slip to give networks of dislocations close to interfacial <100> directions. Evidence for dislocation sources in ZnTe/GaSb films is presented. ZnTe films contained stacking fault pyramids, single Frank faults and a new type of ''diamond defect'' are present at densities up toabout 10(7) cm(-2). Analysis showed that the diamond defects, which were four-sided defects on {111} planes with. <110> edges, were of vacancy type with 1/3 <111> Frank Burgers vectors and intrinsic stacking faults. Although faulted defects showed no tendency to grow by climb, evidence is given for an unfaulted reaction in which a glissile 1/2 <110> dislocation is generated. This new model for dislocation nucleationis discussed.

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Documento generato il 31/03/20 alle ore 22:34:34