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Titolo:
HIGH-RATE PECVD OF A-SI ALLOYS ON LARGE AREAS
Autore:
ROHLECKE S; TEWS R; KOTTWITZ A; SCHADE K;
Indirizzi:
TECH UNIV DRESDEN,INST FESTKORPERELEKTR,MOMMSENSTR 13 D-01062 DRESDENGERMANY
Titolo Testata:
Surface & coatings technology
fascicolo: 1-3, volume: 74-5, anno: 1995,
pagine: 259 - 263
SICI:
0257-8972(1995)74-5:1-3<259:HPOAAO>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; GLOW-DISCHARGE; TEMPERATURE-DEPENDENCE; PLASMA DISCHARGES; DEPOSITION RATE; RF-DISCHARGES; FILM GROWTH; FABRICATION;
Keywords:
PECVD; HIGH RATE DEPOSITION; AMORPHOUS SILICON ALLOYS; PLASMA PROCESS MODEL; POWDER GENERATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
20
Recensione:
Indirizzi per estratti:
Citazione:
S. Rohlecke et al., "HIGH-RATE PECVD OF A-SI ALLOYS ON LARGE AREAS", Surface & coatings technology, 74-5(1-3), 1995, pp. 259-263

Abstract

The deposition of a-Si alloys on large areas was investigated in the frequency region from 3 to 30 MHz. With increasing frequency an increasing deposition rate (5-30 mu m h(-1)) and a decreasing powder formation result. An upscaling from small areas (100 cm(2)-1000 cm(2)) to larger areas (2500 cm(2) for the parallel plate and 5000 cm(2) for the coaxial reactor) was realized. With a homogeneous r.f. voltage we obtained a homogeneous r.f. power dissipation and a homogeneous layer thickness (+/- 5%). An additional stabilization for the discharge over the length was obtained by use of a permanent magnetic field. We have calculated the deposition rate as a function of r.f. power, pressure, gas how rate, frequency, magnetic field, discharge length and gas temperature on the basis of a semiquantitative plasma chemistry model.

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Documento generato il 26/09/20 alle ore 05:37:34