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Titolo:
CURRENT TRANSPORT CHARACTERISTICS OF SIGEC SI HETEROJUNCTION DIODE/
Autore:
CHEN F; ORNER BA; GUERIN D; KHAN A; BERGER PR; SHAH SI; KOLODZEY J;
Indirizzi:
UNIV DELAWARE,DEPT ELECT ENGN NEWARK DE 19716 UNIV DELAWARE,DEPT PHYS & ASTRON NEWARK DE 19716 DUPONT CO INC,EXPT STN WILMINGTON DE 19898
Titolo Testata:
IEEE electron device letters
fascicolo: 12, volume: 17, anno: 1996,
pagine: 589 - 591
SICI:
0741-3106(1996)17:12<589:CTCOSS>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
GROWTH; BETA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
F. Chen et al., "CURRENT TRANSPORT CHARACTERISTICS OF SIGEC SI HETEROJUNCTION DIODE/", IEEE electron device letters, 17(12), 1996, pp. 589-591

Abstract

The characteristics of heterojunction diodes fabricated from p-type epitaxial Si0.07Ge0.91Co0.02 alloy grown by molecular beam epitaxy on n-type Si (100) have been examined by using current-voltage, capacitance-voltage, and Hall effect measurements, The SiGeC/Si heterojunction diode shows good rectification with nearly ideal forward bias behavior and low reverse leakage currents compared to Ge/Si heterojunction diodes, The temperature dependence of the current-voltage behavior indicates that the principle conduction mechanism is by electron injection over a barrier, Reverse breakdown occurs by the avalanche mechanism.

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Documento generato il 03/07/20 alle ore 00:26:51