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Titolo:
REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION
Autore:
SIIMON H; AARIK J;
Indirizzi:
UNIV TARTU,INST EXPTL PHYS & TECHNOL,ULIKOOLI 18 2400 TARTU ESTONIA
Titolo Testata:
Journal de physique. IV
fascicolo: C5, volume: 5, anno: 1995,
parte:, 1
pagine: 277 - 282
SICI:
1155-4339(1995)5:C5<277:ROTAHA>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
EPITAXY; FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
H. Siimon e J. Aarik, "REACTIVITIES OF TACL5 AND H2O AS PRECURSORS FOR ATOMIC LAYER DEPOSITION", Journal de physique. IV, 5(C5), 1995, pp. 277-282

Abstract

Model calculations and time dependence of the deposit mass recorded by quartz crystal micro-balance during atomic layer growth of tantalum oxide are used to determine sticking coefficients of TaCl5 and II2O, and diffusion coefficient of TaCl5 in N-2. It is shown that the reactivity of TaCl5 towards H2O-treated tantalum oxide surface is remarkable higher than the reactivity of II2O towards TaCl5-treated tantalum oxide.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 19:49:38