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Titolo:
CHARGE-TRANSPORT IN A-SI-H DETECTORS - COMPARISON OF ANALYTICAL AND MONTE-CARLO SIMULATIONS
Autore:
HAMEL LA; CHEN WC;
Indirizzi:
UNIV MONTREAL,DEPT PHYS,RECH PHYS & TECHNOL COUCHES MINCES GRP,POB 6128 MONTREAL PQ H3C 3J7 CANADA
Titolo Testata:
IEEE transactions on nuclear science
fascicolo: 4, volume: 42, anno: 1995,
parte:, 1
pagine: 235 - 239
SICI:
0018-9499(1995)42:4<235:CIAD-C>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
L.A. Hamel e W.C. Chen, "CHARGE-TRANSPORT IN A-SI-H DETECTORS - COMPARISON OF ANALYTICAL AND MONTE-CARLO SIMULATIONS", IEEE transactions on nuclear science, 42(4), 1995, pp. 235-239

Abstract

To understand the signal formation in hydrogenated amorphous silicon (a-Si:H) p-i-n detectors, dispersive charge transport due to multiple trapping in a-Si:H tail states is studied both analytically and by Monte Carlo simulations: An analytical solution is found for the free electron and hole distributions n(x, t) and the transient current I(t) due to an initial electron-hole pair generated at an arbitrary depth in the detector for the case of exponential band tails and linear field profiles; integrating over all e-h pairs produced along the particle's trajectory yields the actual distributions and current; the induced charge Q(t) is obtained by numerically integrating the current. This generalizes previous models used to analyze time-of-flight experiments. The Monte Carlo simulation provides the same information but can be applied to arbitrary field profiles, field dependent mobilities and localized state distributions. A comparison of both calculations is made ina simple case to show that identical results are obtained over a large time domain. A comparison with measured signals confirms that the total induced charge depends on the applied bias voltage. The applicability of the same approach to other semiconductors is discussed.

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Documento generato il 27/11/20 alle ore 09:43:16