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Titolo: CHARGETRANSPORT IN ASIH DETECTORS  COMPARISON OF ANALYTICAL AND MONTECARLO SIMULATIONS
Autore: HAMEL LA; CHEN WC;
 Indirizzi:
 UNIV MONTREAL,DEPT PHYS,RECH PHYS & TECHNOL COUCHES MINCES GRP,POB 6128 MONTREAL PQ H3C 3J7 CANADA
 Titolo Testata:
 IEEE transactions on nuclear science
fascicolo: 4,
volume: 42,
anno: 1995,
parte:, 1
pagine: 235  239
 SICI:
 00189499(1995)42:4<235:CIADC>2.0.ZU;2X
 Fonte:
 ISI
 Lingua:
 ENG
 Tipo documento:
 Article
 Natura:
 Periodico
 Settore Disciplinare:
 Science Citation Index Expanded
 Science Citation Index Expanded
 Citazioni:
 10
 Recensione:
 Indirizzi per estratti:



 Citazione:
 L.A. Hamel e W.C. Chen, "CHARGETRANSPORT IN ASIH DETECTORS  COMPARISON OF ANALYTICAL AND MONTECARLO SIMULATIONS", IEEE transactions on nuclear science, 42(4), 1995, pp. 235239
Abstract
To understand the signal formation in hydrogenated amorphous silicon (aSi:H) pin detectors, dispersive charge transport due to multiple trapping in aSi:H tail states is studied both analytically and by Monte Carlo simulations: An analytical solution is found for the free electron and hole distributions n(x, t) and the transient current I(t) due to an initial electronhole pair generated at an arbitrary depth in the detector for the case of exponential band tails and linear field profiles; integrating over all eh pairs produced along the particle's trajectory yields the actual distributions and current; the induced charge Q(t) is obtained by numerically integrating the current. This generalizes previous models used to analyze timeofflight experiments. The Monte Carlo simulation provides the same information but can be applied to arbitrary field profiles, field dependent mobilities and localized state distributions. A comparison of both calculations is made ina simple case to show that identical results are obtained over a large time domain. A comparison with measured signals confirms that the total induced charge depends on the applied bias voltage. The applicability of the same approach to other semiconductors is discussed.
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Documento generato il 27/11/20 alle ore 09:43:16