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Titolo:
GROWTH AND CHARACTERIZATION OF IRON-DOPED SEMIINSULATING INP
Autore:
OH DK; PARK C; CHOO H; KIM HM; PYUN KE; PARK HM;
Indirizzi:
ELECTR & TELECOMMUN RES INST,DIV SEMICOND TECHNOL TAEJON 305600 SOUTHKOREA
Titolo Testata:
Journal of the Korean Physical Society
fascicolo: 4, volume: 28, anno: 1995,
pagine: 510 - 512
SICI:
0374-4884(1995)28:4<510:GACOIS>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
VAPOR-PHASE EPITAXY; LEVEL; SPECTROSCOPY; FE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
D.K. Oh et al., "GROWTH AND CHARACTERIZATION OF IRON-DOPED SEMIINSULATING INP", Journal of the Korean Physical Society, 28(4), 1995, pp. 510-512

Abstract

Semi-insulating (SI) InP with Fe concentrations between 7x10(16) and 6X10(17) cm(-3) was grown by low-pressure metalorganic vapor-phase epitaxy (MOVPE). The highest resistivity value (rho=2.2x10(9) Omega cm) was obtained at a 4X10(17) cm(-3) Fe-doping concentration with no evidence of any crystal defects on the Fe-P precipitates by using transmission electron microscope (TEM) analysis, Atomic interdiffusions of Fe into the adjacent Zn-doped InP and Si-doped InP were also observed in detail by secondary ion mass spectroscopy (SIMS).

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Documento generato il 02/10/20 alle ore 01:53:05