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Titolo:
IN-SITU DETECTION OF SURFACE SIHN IN SYNCHROTRON-RADIATION-INDUCED CHEMICAL-VAPOR-DEPOSITION OF A-SI ON AN SIO2 SUBSTRATE
Autore:
YOSHIGOE A; NAGASONO M; MASE K; URISU T; SEKI S; NAKAGAWA Y;
Indirizzi:
INST MOLEC SCI,DEPT VACUUM UV PHOTOSCI,38 MYODAIJI OKAZAKI AICHI 444 JAPAN INST MOLEC SCI,DEPT VACUUM UV PHOTOSCI OKAZAKI AICHI 444 JAPAN INST MOLEC SCI,GRAD UNIV ADV STUDIES OKAZAKI AICHI 444 JAPAN TAKUSHOKU UNIV,FAC ENGN HACHIOJI TOKYO 193 JAPAN TORAY RES CTR LTD OTSU SHIGA 520 JAPAN
Titolo Testata:
Journal of synchrotron radiation
, volume: 2, anno: 1995,
parte:, 4
pagine: 196 - 200
SICI:
0909-0495(1995)2:<196:IDOSSI>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
REFLECTION ABSORPTION-SPECTROSCOPY; INFRARED-SPECTROSCOPY; FILMS;
Keywords:
SILICON HYDRIDES; CHEMICAL VAPOR DEPOSITION; INFRARED REFLECTION ABSORPTION SPECTROSCOPY; SURFACE REACTIONS; DISILANE; AMORPHOUS SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
A. Yoshigoe et al., "IN-SITU DETECTION OF SURFACE SIHN IN SYNCHROTRON-RADIATION-INDUCED CHEMICAL-VAPOR-DEPOSITION OF A-SI ON AN SIO2 SUBSTRATE", Journal of synchrotron radiation, 2, 1995, pp. 196-200

Abstract

The sensitivity and linearity of infrared reflection absorption spectroscopy (IRAS) has been significantly improved by using a buried-metal-layer (BML) substrate having an SiO2(15nm)/Al(200 nm)/Si(100) structure, instead of a plain Si(100) substrate. By applying this BML-IRAS technique to the in situ observation of synchrotron-radiation-induced chemical vapor deposition of amorphous Si (a-Si) on an SiO2 surface using Si2H6 gas, the vibrational spectra of surface SiHn species in this reaction system have been observed for the first time with sufficient sensitivity for submonolayer coverage. The main silicon hydride speciesafter deposition at 423 K are surface SiH2 and SiH. Surface SiH3 and SiH2 are observed to be easily decomposed by synchrotron radiation irradiation. The decomposition rate of SiH by synchrotron radiation irradiation is much slower than those of SiH2 and SiH3.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/09/20 alle ore 11:06:22