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Titolo:
EFFECT OF OXYGEN CONTAMINATION ON THE DEPOSITION AND ETCHING PROPERTIES OF SI-H-CL-O AND SI-H-F-O SYSTEMS
Autore:
CHUNG CH; RHEE SW; MOON SH;
Indirizzi:
SEOUL NATL UNIV,DEPT CHEM ENGN,KWANAK KU,SHINLIM DONG SAN 56-1 SEOUL 151742 SOUTH KOREA POHANG UNIV SCI & TECHNOL,DEPT CHEM ENGN POHANG 790784 SOUTH KOREA
Titolo Testata:
Journal of the Electrochemical Society
fascicolo: 7, volume: 142, anno: 1995,
pagine: 2405 - 2410
SICI:
0013-4651(1995)142:7<2405:EOOCOT>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL VAPOR-DEPOSITION; LOW-TEMPERATURE; THERMODYNAMIC EVALUATION; EPITAXIAL-GROWTH; SILICON EPITAXY; EQUILIBRIA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
C.H. Chung et al., "EFFECT OF OXYGEN CONTAMINATION ON THE DEPOSITION AND ETCHING PROPERTIES OF SI-H-CL-O AND SI-H-F-O SYSTEMS", Journal of the Electrochemical Society, 142(7), 1995, pp. 2405-2410

Abstract

Calculations were made to obtain the equilibrium gas compositions in Si-H-Cl-O and Si-H-F-O systems containing trace amounts of oxygen. From the results, the boundary curves to define the regions for deposition or etching of silicon and silicon oxide were derived and the conditions for silicon epitaxy at low temperatures were proposed. Results of previous experiments demonstrating silicon epitaxy at low temperaturescould be anticipated from the trends observed in this study.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/12/20 alle ore 00:01:46