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Titolo:
AN IN-DEPTH ANALYSIS OF THE ELYMAT TECHNIQUE FOR CHARACTERIZING METALLIC MICROCONTAMINATION IN SILICON - EXPERIMENTAL VALIDATION FOR IRON CONTAMINATION IN P-TYPE WAFERS
Autore:
WALZ D; LECARVAL G; JOLY JP; KAMARINOS G;
Indirizzi:
CEN GRENOBLE,DMEL,CEA TECHNOL AVANCEES,LETI,17 RUE MARTYRS F-38054 GRENOBLE 9 FRANCE ENSERG,LPCS F-38016 GRENOBLE 1 FRANCE
Titolo Testata:
Semiconductor science and technology
fascicolo: 7, volume: 10, anno: 1995,
pagine: 1022 - 1033
SICI:
0268-1242(1995)10:7<1022:AIAOTE>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
CARRIER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
27
Recensione:
Indirizzi per estratti:
Citazione:
D. Walz et al., "AN IN-DEPTH ANALYSIS OF THE ELYMAT TECHNIQUE FOR CHARACTERIZING METALLIC MICROCONTAMINATION IN SILICON - EXPERIMENTAL VALIDATION FOR IRON CONTAMINATION IN P-TYPE WAFERS", Semiconductor science and technology, 10(7), 1995, pp. 1022-1033

Abstract

Application of the on-line Elymat technique for measuring bulk carrier recombination lifetime is numerically analysed using a complete three-dimensional carrier transport simulation including the Dember electric field, the characteristics of the laser beam, the transport parameters of the wafer and Shockley-Read-Hall recombination kinetics. We found a strong dependency of the measured lifetime on the shape and powerof the laser beam as well as on the deep energy level of the impurityin the gap, owing to nonlinear effects not described by the classicalmodel. Our numerical simulations show that the use of a small laser beam permitting the approximation of point-like excitation gives the most reliable results. The comparison between our numerical simulations and experimental results for iron-contaminated p-type samples with a resistivity between 1 and 18 Ohm cm shows that the donor level of Fe-B pairs at E(C) - 0.3 eV and not the classical acceptor level at E(V) + 0.1 eV is the predominant site of recombination of Fe-B pairs in p-type silicon in the above doping range. First results for the electron and hole capture cross sections for this defect will be given. Based on these results, the sensitivity of the technique is shown to be less than 10(11) cm(-3) in the case of Fe-B pairs corresponding to less than 10 PPT (parts per trillion).

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/07/20 alle ore 06:47:30