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Titolo:
THE ENVIRONMENT OF LATTICE SITES DURING THERMAL EPITAXIAL REGROWTH OFION-BEAM AMORPHIZED SILICON
Autore:
KALBITZER S; GREAVES GN; DENT AJ; DERST G; MULLER G;
Indirizzi:
MAX PLANCK INST KERNPHYS D-69117 HEIDELBERG GERMANY SERC,DARESBURY LAB WARRINGTON WA4 4AD CHESHIRE ENGLAND DAIMLER BENZ AG D-81663 MUNICH GERMANY
Titolo Testata:
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
fascicolo: 1-4, volume: 97, anno: 1995,
pagine: 312 - 315
SICI:
0168-583X(1995)97:1-4<312:TEOLSD>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
6
Recensione:
Indirizzi per estratti:
Citazione:
S. Kalbitzer et al., "THE ENVIRONMENT OF LATTICE SITES DURING THERMAL EPITAXIAL REGROWTH OFION-BEAM AMORPHIZED SILICON", Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 97(1-4), 1995, pp. 312-315

Abstract

To detect changes in the environment of the lattice constituents in ion beam amorphized Si material at various stages annealing glancing angle X-ray absorption fine structure (XAFS) measurements at the Si K-edge were performed. The recrystallisation of the Si matrix was seen by the emerging of the second and third shell of the diamond structure. The transition took place in a temperature interval of about 100 degrees C centered at 625 degrees C, consistent with former Rutherford-backscattering/channeling results.

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Documento generato il 01/10/20 alle ore 15:23:08