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Titolo:
CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ONV-GROOVE PATTERNED SI SUBSTRATES
Autore:
HIGGS V; LIGHTOWLERS EC; USAMI N; SHIRAKI Y; MINE T; FUKATSU S;
Indirizzi:
UNIV LONDON KINGS COLL,DEPT PHYS LONDON WC2R 2LS ENGLAND UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU TOKYO 153 JAPAN
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 150, anno: 1995,
parte:, 2
pagine: 1070 - 1073
SICI:
0022-0248(1995)150:1-4<1070:CIOSQW>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; PHOTOLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
6
Recensione:
Indirizzi per estratti:
Citazione:
V. Higgs et al., "CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ONV-GROOVE PATTERNED SI SUBSTRATES", Journal of crystal growth, 150(1-4), 1995, pp. 1070-1073

Abstract

Cathodoluminescence (CL) imaging and spectroscopy have been used to characterize SiGe quantum wires grown by gas source molecular beam epitaxy (GS-MBE) on V-groove patterned substrates. CL spectra recorded at T approximate to 5 K contained three separate SiGe no-phonon luminescence features and their transverse optic phonon replicas. MonochromaticCL imaging recorded in cross section reveals that the three differentluminescence features are related to the SiGe(100) quantum wells, SiGe(111) quantum wells and the SiGe quantum wire. CL images from the SiGe(100) reveal that the low temperature (T = 5-30 K) images are broadened by exciton diffusion, whereas at higher temperatures (T = 30-70 K) the CL images become sharper due to non-excitonic recombination.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 08:09:01