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Titolo:
METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE WITH NEW ZN AND SEPRECURSORS WITHOUT PRECRACKING
Autore:
SATO G; NUMAI T; HOSHIYAMA M; SUEMUNE I; MACHIDA H; SHIMOYAMA N;
Indirizzi:
HOKKAIDO UNIV,ELECTR SCI RES INST,KITA 12,NISHI 6 SAPPORO HOKKAIDO 060 JAPAN HOKKAIDO UNIV,ELECTR SCI RES INST SAPPORO HOKKAIDO 060 JAPAN TRICHEM LAB YAMANASHI 40901 JAPAN
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 150, anno: 1995,
parte:, 2
pagine: 734 - 737
SICI:
0022-0248(1995)150:1-4<734:MMEGOZ>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
7
Recensione:
Indirizzi per estratti:
Citazione:
G. Sato et al., "METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE WITH NEW ZN AND SEPRECURSORS WITHOUT PRECRACKING", Journal of crystal growth, 150(1-4), 1995, pp. 734-737

Abstract

We report the first successful precracking-free metalorganic molecular beam epitaxy of ZnSe on GaAs (001) substrates. New precursors are diisopropyl zinc (DiPZn), Zn(i-C3H7)(2) for Zn, and ditertiarybutyl selenide (DtBSe), Se(t-C4H9)(2) for Se. It is found that these precursors decomposed at low temperatures, such as 100 degrees C for DiPZn and 150 degrees C for DtBSe. This decomposition of the precursors at low temperatures allows us to grow ZnSe on GaAs substrates without precracking. Growth rate is the largest at substrate temperature of 350 degrees C and VI/II ratio of 12. Under these conditions, the growth rate increases up to 0.6 mu m/h.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 14:25:20