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Titolo:
ROLE OF THE SUBSTRATE DEOXIDATION PROCESS IN THE GROWTH OF STRAINED INAS INP HETEROSTRUCTURES/
Autore:
BRUNI MR; GAMBACORTI N; KACIULIS S; MATTOGNO G; SIMEONE MG; QUAGLIANO LG; TOMASSINI N; JUSSERAND B;
Indirizzi:
CNR,ICMAT I-00016 MONTEROTONDO ITALY CNR,IMAI I-00016 MONTEROTONDO ITALY CTR NATL ETUD TELECOMMUN,LAB BAGNEUX F-92220 BAGNEUX FRANCE
Titolo Testata:
Journal of crystal growth
fascicolo: 1-4, volume: 150, anno: 1995,
parte:, 1
pagine: 123 - 127
SICI:
0022-0248(1995)150:1-4<123:ROTSDP>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
M.R. Bruni et al., "ROLE OF THE SUBSTRATE DEOXIDATION PROCESS IN THE GROWTH OF STRAINED INAS INP HETEROSTRUCTURES/", Journal of crystal growth, 150(1-4), 1995, pp. 123-127

Abstract

We have investigated the role of the arsenic flux used during the substrate deoxidation process in the MBE (molecular beam epitaxy) growth of strained InAs/InP heterostructures. Two different experiments were performed: (i) thermal cleaning of the InP wafer under an As flux at different exposure times and (ii) the growth of very thin InAs layers (3-9 ML). The samples grown were characterized by Raman spectroscopy and selected area X-ray photoelectron spectroscopy. The results obtaineddemonstrated the formation of an InAsxP1-x sublayer at the interface of the InAs/InP system. The annealing of InP under an As flux promotesnot only As --> P substitution on the surface, but also the subsequent diffusion of As atoms into the deeper subsurface region of InP.

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Documento generato il 30/11/20 alle ore 00:26:42