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Titolo:
USE OF FIELD PLATE IN A LINEAR SILICON DRIFT DETECTOR (SDD)
Autore:
GRAMEGNA G; CORSI F; CANTATORE E; CUOMO M; DEVENUTO D; MARZOCCA C; PORTACCI GV; VACCHI A; MANZARI V; NAVACH F; BEOLE S; CASSE G; GIUBELLINO P; RICCATI L; BURGER P;
Indirizzi:
POLITECN BARI,DIPARTIMENTO ELETTROTECN & ELETTRON BARI ITALY IST NAZL FIS NUCL BARI ITALY UNIV TRIESTE TRIESTE ITALY IST NAZL FIS NUCL TRIESTE ITALY UNIV BARI,DIPARTMENTO FIS BARI ITALY UNIV TURIN,DIPARTMENTO FIS TURIN ITALY IST NAZL FIS NUCL TURIN ITALY CANBERRA SEMICOND NV B-2250 OLEN BELGIUM
Titolo Testata:
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
fascicolo: 1-2, volume: 360, anno: 1995,
pagine: 110 - 112
SICI:
0168-9002(1995)360:1-2<110:UOFPIA>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHAMBER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
G. Gramegna et al., "USE OF FIELD PLATE IN A LINEAR SILICON DRIFT DETECTOR (SDD)", Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 360(1-2), 1995, pp. 110-112

Abstract

By use of extensive simulation, it is shown how a spread of the aluminium metallization over the intercathodic field oxide sensibly lowers the electric field at reverse biased p(+) n junctions, thus allowing use of higher drift fields. Based on the simulation results, the layoutof a few test structures implementing alternative technological choices has been defined. The fabrication of these prototype detectors is presently in progress.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 04:12:03