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Titolo:
STEPS TOWARDS THE USE OF SILICON DRIFT DETECTORS IN HEAVY-ION COLLISIONS AT LHC
Autore:
BEOLE S; BURGER P; CANTATORE E; CASSE G; CORSI F; CUOMO M; DABROWSKI W; DEVENUTO D; GIUBELLINO P; GRAMEGNA G; MANZARI V; MARZOCCA C; NAVACH F; PORTACCI G; RICCATI L; VACCHI A;
Indirizzi:
UNIV TURIN,DIPARTIMENTO FIS SPERIMENTALE TURIN ITALY IST NAZL FIS NUCL I-10125 TURIN ITALY CANBERRA SEMICOND NV B-2250 OLEN BELGIUM POLITECN BARI,DIPARTIMENTO ELETTROTECN & ELETTRON BARI ITALY IST NAZL FIS NUCL I-70126 BARI ITALY UNIV BARI,DIPARTMENTO FIS BARI ITALY UNIV TRIESTE,DIPARTMENTO FIS I-34127 TRIESTE ITALY IST NAZL FIS NUCL TRIESTE ITALY ACAD MIN & MET,FAC PHYS & NUCL TECH KRAKOW POLAND
Titolo Testata:
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
fascicolo: 1-2, volume: 360, anno: 1995,
pagine: 67 - 70
SICI:
0168-9002(1995)360:1-2<67:STTUOS>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
HIGH-RESISTIVITY SILICON;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
6
Recensione:
Indirizzi per estratti:
Citazione:
S. Beole et al., "STEPS TOWARDS THE USE OF SILICON DRIFT DETECTORS IN HEAVY-ION COLLISIONS AT LHC", Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 360(1-2), 1995, pp. 67-70

Abstract

The inner tracking system of the ALICE detector for Pb-Pb collisions at the LHC require a very good granularity in the innermost planes, due to the high particle density, up to 8000 particles per unit of rapidity. The silicon drift detectors are a very good candidate for this application, but up to now no large system using this technology has been industrially produced and operated in experiments. One of the first steps towards large scale production is the study of the doping uniformity in commercially available Si wafers. The understanding of doping fluctuations is of fundamental importance since they introduce deviations of the electron trajectories from the expected ones. In addition, it is also necessary to know the changes possibly introduced by different processing steps in the resistivity profiles. We report here the results of measurements of resistivity profiles for NTD silicon wafers both before and after processing.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 04:20:20