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Titolo:
PHOTOLUMINESCENCE OF SI NANOCRYSTALS CREATED BY HEAVY-ION IRRADIATIONOF AMORPHOUS SIO FILMS
Autore:
RODITCHEV D; LAVALLARD P; GANDAIS M; DOORYHEE E; SLAOUI A; PERRIERE J;
Indirizzi:
UNIV PARIS 07,PHYS SOLIDES GRP,2 PL JUSSIEU F-75251 PARIS FRANCE UNIV PARIS 06,CNRS,URA 17 F-75251 PARIS FRANCE UNIV PARIS 06,MINERAL & CRISTALLOG LAB F-75251 PARIS FRANCE UNIV PARIS 07,CNRS,URA 9 F-75251 PARIS FRANCE GANIL,LAB CIRIL F-14040 CAEN FRANCE CRN,LAB PHASE F-67037 STRASBOURG FRANCE
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
, volume: 34, anno: 1994, supplemento:, 34-1
pagine: 34 - 36
SICI:
0021-4922(1994)34:<34:POSNCB>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Keywords:
SILICON NANOCRYSTALS; HEAVY ION IRRADIATION; PHOTOLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
5
Recensione:
Indirizzi per estratti:
Citazione:
D. Roditchev et al., "PHOTOLUMINESCENCE OF SI NANOCRYSTALS CREATED BY HEAVY-ION IRRADIATIONOF AMORPHOUS SIO FILMS", JPN J A P 2, 34, 1994, pp. 34-36

Abstract

In order to create Si nanocrystals we have irradiated amorphous filmsof SiO by high energy heavy ions. The electron microscope images clearly show crystallites of 15-25 Angstrom size formed inside ion traces of similar to 200 Angstrom diameter. The broad luminescence band observed in the visible is attributed to the radiative recombination of photoexcited carriers confined in the Si crystallites. We are able to control the density and the mean size of the nanocrystals by tuning the irradiation parameters.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/07/20 alle ore 05:30:23