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Titolo:
STRUCTURAL-PROPERTIES OF LINBO3 THIN-FILMS GROWN BY THE PULSED-LASER DEPOSITION TECHNIQUE
Autore:
AUBERT P; GARRY G; BISARO R; LOPEZ JG;
Indirizzi:
THOMSON CSF,CENT RECH LAB,DOMAINE CORBEVILLE F-91404 ORSAY FRANCE UNIV PARIS 06,PHYS SOLIDES LAB F-75005 PARIS FRANCE UNIV PARIS 07,PHYS SOLIDES LAB F-75005 PARIS FRANCE
Titolo Testata:
Applied surface science
fascicolo: 1-4, volume: 86, anno: 1995,
pagine: 144 - 148
SICI:
0169-4332(1995)86:1-4<144:SOLTGB>2.0.ZU;2-F
Fonte:
ISI
Lingua:
ENG
Soggetto:
EPITAXIAL-GROWTH; LITHIUM-NIOBATE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
P. Aubert et al., "STRUCTURAL-PROPERTIES OF LINBO3 THIN-FILMS GROWN BY THE PULSED-LASER DEPOSITION TECHNIQUE", Applied surface science, 86(1-4), 1995, pp. 144-148

Abstract

LiNbO3 thin films have been deposited onto R-cut and C-cut single crystalline sapphire substrates (alpha-Al2O3, (1 $($) over bar$$ 102) and(0001)) by the pulsed laser deposition technique at different oxygen pressures and substrate temperatures. Thin film composition and structure have been determined using Rutherford backscattering spectroscopy (RES) and X-ray diffraction experiments. The atomic composition is dependent on the oxygen pressure in the range 0.5-1.3 mbar. At pressures lower than 1.3 mbar, we have observed a deviation from the stoichiometry. Nearly stoichiometric thin films have been obtained for a pressureequal to 1.3 mbar. For that pressure, the atomic composition does notdepend on the substrate temperature in the range 650-800 degrees C. Under optimised conditions the (1 $($) over bar$$ 102) and (0001) preferential orientations of growth have been obtained on (1 $($) over bar$$ 102) and (0001) sapphire substrates, respectively.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/09/20 alle ore 13:26:12